PR726476 - Lithography Process Support for Two Lithography Layers

We are seeking proposals for lithography process support for two lithography layers. The project involves utilizing 193nm (ArF) or 248nm (KrF) lithography technology for the first layer to expose structures of a minimum of 150nm. For the first lithography layer two possible mask options are required. The provider will be responsible for photoresist, exposure, and development processes, including metrology. For the second lithography layer, i-Line lithography technology can be used since dimensions for that layer are at least 450 nm. The provider will again handle the mentioned steps (see figure 1). The entire project must adhere to the protocol zones for wafer processing (Front End of Line) as per SEMI Standard. PR726476 - Lithography Process Support for Two Lithography Layers